56.1: Development of IGZO-TFT and Creation of New Devices Using IGZO-TFT-Reference-Cited by-同舟云学术

56.1: Development of IGZO-TFT and Creation of New Devices Using IGZO-TFT

Published:2013-06 Issue:1 Volume:44 Page:771-774
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:

Author:

Kataoka Yoshiharu,Imai Hajime,Nakata Yukinobu,Daitoh Tohru,Kimura Takuya Matsuo Naofumi,Nakano Taketoshi,Mizuno Yukio,Oketani Taimi,Takahashi Masahiro,Tsubuku Masashi,Miyake Hiroyuki,Hirakata Tetsuji Ishitani Yoshiharu,Koyama Jun,Yamazaki Shunpei,Koezuka Junichi,Okazaki Kenichi

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/j.2168-0159.2013.tb06329.x/fullpdf

Reference4 articles.

1. Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. 15.1: Research, Development, and Application of Crystalline Oxide Semiconductor

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