Bidirectional Control of the Band Bending at the (2̅01) and (010) Surfaces of β-Ga2O3 Using Aryldiazonium Ion and Phosphonic Acid Grafting-Reference-Cited by-同舟云学术

Bidirectional Control of the Band Bending at the (2̅01) and (010) Surfaces of β-Ga2O3 Using Aryldiazonium Ion and Phosphonic Acid Grafting

Published:2021-12-15 Issue:12 Volume:3 Page:5608-5620
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Carroll Liam R.¹,Martinez-Gazoni Rodrigo F.¹^ORCID,Gaston Nicola²,Reeves Roger J.¹,Downard Alison J.¹^ORCID,Allen Martin W.³^ORCID

Affiliation:

1. School of Physical and Chemical Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch 8140, New Zealand

2. MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Physics, University of Auckland, Auckland 1142, New Zealand

3. Department of Electrical and Computer Engineering and MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch 8140, New Zealand

Funder

MacDiarmid Institute for Advanced Materials and Nanotechnology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01064

Reference72 articles.

1. A review of Ga2O3materials, processing, and devices

2. Guest Editorial: The dawn of gallium oxide microelectronics

3. High temperature (500 °C) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3

4. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

5. Scaling-Up of Bulk β-Ga2O3Single Crystals by the Czochralski Method

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