Modifying the Barrier Height of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Contacts Using Covalently Grafted Organic Layers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Modifying the Barrier Height of β-Ga₂O₃ Schottky Contacts Using Covalently Grafted Organic Layers

Published:2024-02-19 Issue:3 Volume:6 Page:1628-1637
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Carroll Liam R.¹,Downard Alison J.¹^ORCID,Reeves Roger J.¹,Allen Martin W.²^ORCID

Affiliation:

1. School of Physical and Chemical Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch 8140, New Zealand

2. Department of Electrical and Computer Engineering and MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Canterbury, Christchurch 8140, New Zealand

Funder

Ministry of Business, Innovation and Employment

MacDiarmid Institute for Advanced Materials and Nanotechnology

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01543

Reference64 articles.

1. Guest Editorial: The dawn of gallium oxide microelectronics

2. A review of Ga2O3materials, processing, and devices

3. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

4. Relationship between the hydroxyl termination and band bending at (2¯01)β−Ga2O3 surfaces

5. Surface properties of annealed semiconducting β-Ga2O3 (1 0 0) single crystals for epitaxy

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP