Funder
National Key Research and Development Program of China
Fundamental Research Funds for the Central Universities
Xidian University
National Natural Science Foundation of China
Subject
Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science
Reference33 articles.
1. High performance β-Ga2O3 Schottky barrier transistors with large work function TMD gate of NbS2 and TaS2;Kim;Adv. Funct. Mater.,2021
2. Review of Ga2O3-based optoelectronic devices;Guo;Materials Today Physics,2019
3. The dawn of Ga2O3 HEMTs for high power electronics - a review;Singh;Mater. Sci. Semicond. Process.,2020
4. Recent progress on the electronic structure, defect, and doping properties of Ga2O3;Zhang;Apl. Mater.,2020
5. A perspective on β-Ga2O3 micro/nanoelectromechanical systems;Zheng;Appl. Phys. Lett.,2022
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