Ultrahigh Performance of β-Ga2O3-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique
Author:
Affiliation:
1. Department of Semiconductors, Materials and Energy Research Center, Karaj 3177983634, Iran
Funder
Materials and Energy Research Center
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00502
Reference65 articles.
1. Ga2O3 photodetector arrays for solar-blind imaging
2. Metal–Semiconductor–Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism
3. A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode
4. Ultrahigh Performance of Self-Powered β-Ga2O3 Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer
5. Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio
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4. High Responsivity and Detectivity Β-Ga <sub>2</sub>O <sub>3</sub> Solar-Blind Photodetectors Optimized by Oxygen Vacancy Engineering;2024
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