Ga2O3 photodetector arrays for solar-blind imaging
Author:
Affiliation:
1. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices
2. School of Physics and Engineering
3. Zhengzhou University
4. Zhengzhou 450001
5. China
Abstract
A multi-channel Ga2O3 photodetector array with 16 cells was fabricated to realize solar-blind imaging.
Funder
China National Funds for Distinguished Young Scientists
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC05251D
Reference35 articles.
1. An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures
2. Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector
3. Graphene-β -Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application
4. Solar-Blind Avalanche Photodetector Based On Single ZnO–Ga2O3 Core–Shell Microwire
5. Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction
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