An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures-Reference-Cited by-同舟云学术

An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures

Published:2017-03-22 Issue:17 Volume:27 Page:1700264
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhao Bin¹,Wang Fei²,Chen Hongyu¹,Zheng Lingxia¹,Su Longxing¹,Zhao Dongxu²,Fang Xiaosheng¹

Affiliation:

1. Department of Materials ScienceFudan University Shanghai 200433 P. R. China

2. State Key Laboratory of Luminescence and ApplicationsChangchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences Changchun 130033 P. R. China

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201700264

Reference50 articles.

1. Semiconductor ultraviolet detectors

2. Nanostructured Photodetectors: From Ultraviolet to Terahertz

3. Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In2Ge2O7 Nanobelts

4. Flame Detection by a β-Ga2O3-Based Sensor

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