Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector-Reference-Cited by-同舟云学术

Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector

Published:2017 Issue:40 Volume:5 Page:10562-10570
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Peigang¹²³⁴⁵,Shi Haoze¹²³⁴⁵,Chen Kai¹²³⁴⁵,Guo Daoyou¹²³⁴⁵^ORCID,Cui Wei⁶⁷⁸⁵,Zhi Yusong⁶⁷⁸⁵,Wang Shunli¹²³⁴⁵,Wu Zhenping⁶⁷⁸⁵,Chen Zhengwei⁶⁷⁸⁵,Tang Weihua⁶⁷⁸⁵

Affiliation:

1. Center for Optoelectronics Materials and Devices

2. Department of Physics

3. Zhejiang Sci-Tech University

4. Hangzhou 310018

5. China

6. State Key Laboratory of Information Photonics and Optical Communications & Laboratory of Optoelectronics Materials and Devices

7. School of Science, Beijing University of Posts and Telecommunications

8. Beijing 100876

Abstract

A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W⁻¹) was fabricated by constructing p–n junction of GaN/Ga₂O₃ films.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC03746E

Reference47 articles.

1. Nanostructured Photodetectors: From Ultraviolet to Terahertz

2. A Self-Powered and Stable All-Perovskite Photodetector-Solar Cell Nanosystem

3. Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity