Comparative study of n-MgZnO/p-Si ultraviolet-B photodetector performance with different device structures
Author:
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3600789
Reference26 articles.
1. Evidence of the Zn Vacancy Acting as the Dominant Acceptor inn-Type ZnO
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4. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
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