The influence of deposition pressure on the physical properties of Ga2O3 films and the high responsivity self-powered DUV photodetector based on n-Ga2O3/CuO/p-GaN heterojunction-Reference-Cited by-同舟云学术

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The influence of deposition pressure on the physical properties of Ga2O3 films and the high responsivity self-powered DUV photodetector based on n-Ga2O3/CuO/p-GaN heterojunction

Published:2025-01 Issue: Volume:180 Page:111533
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Zhang Xian,Yue Zhiang,Xiang Guojiao,Zhang Jinming,Zhao Enqin,Jin Wenwen,Shu Jingwen,He Hangyu,Wang Lukai,Chang Guozhuang,Ye Wenxuan,Wang Hui,Zhao Yang

Publisher

Elsevier BV

Reference68 articles.

1. Tunable Ga2O3 solar-blind photosensing performance via thermal reorder engineering and energy-band modulation;Xi;Nanotechnology,2024

2. Self-powered deep ultraviolet PIN photodetectors with excellent response performance based on Ga2O3 epitaxial films grown on p-GaN;Chen;Appl. Phys. Lett.,2023

3. Self-powered solar-blind ultraviolet photodetectors with Ga2O3 nanowires as the interlayer;Li;Vacuum,2023

4. The excellent performance of β-Ga2O3 Schottky photodiode under forward bias and its application in solar-blind ultraviolet communication;Nie;Mater. Today Phys.,2023

5. High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions;Chen;Vacuum,2023

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