Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability-Reference-Cited by-同舟云学术

Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability

Author:

Kang Yu-Seon¹,Kang Hang-Kyu¹,Kim Dae-Kyoung¹,Jeong Kwang-Sik¹,Baik Min¹,An Youngseo²,Kim Hyoungsub²,Song Jin-Dong³,Cho Mann-Ho¹

Affiliation:

1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

2. School Department of Material Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea

3. Center of Optoelectronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea

Funder

Samsung

Korea Institute of Science and Technology

Yonsei University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

Reference38 articles.

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