Demonstrating 1 nm‐oxide‐equivalent‐thickness La 2 O 3 and HfO 2 multi‐layer composite oxides on In 0.53 Ga 0.47 As MOS capacitor-Reference-Cited by-同舟云学术

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Demonstrating 1 nm‐oxide‐equivalent‐thickness La 2 O 3 and HfO 2 multi‐layer composite oxides on In 0.53 Ga 0.47 As MOS capacitor

Published:2016-01 Issue:1 Volume:52 Page:59-61
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Wu Wen‐Hao¹,Lin Yueh‐Chin¹,Hou Tzu‐Ching²,Lin Tai‐Wei²,Hsu Hisang‐Hua³,Wong Yuen‐Yee¹,Iwai Hiroshi⁴,Kakushima Kuniyuki⁴,Chang Edward Yi¹

Affiliation:

1. Institute of Materials Science and Engineering, National Chiao‐Tung UniversityHsinchuTaiwan

2. Institute of Photonics Systems, National Chiao‐Tung UniversityTainanTaiwan

3. Institute of Imaging and Biomedical Photonics, National Chiao‐Tung UniversityTainanTaiwan

4. Department of Electronics and Applied PhysicsTokyo Institute of TechnologyMeguroTokyoJapan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.1087

Reference4 articles.

1. Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

2. Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

3. Electrical Characterization and Materials Stability Analysis of ${\rm La}_{2}{\rm O}_{3}/{\rm HfO}_{2}$ Composite Oxides on n-${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOS Capacitors With Different Annealing Temperatures

4. Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability;ACS Applied Materials & Interfaces;2016-03-09

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