Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition-Reference-Cited by-同舟云学术

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Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition

Published:2008-03-17 Issue:11 Volume:92 Page:112904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ok InJo,Kim H.,Zhang M.,Zhu F.,Park S.,Yum J.,Zhao H.,Garcia Domingo,Majhi Prashant,Goel N.,Tsai W.,Gaspe C. K.,Santos M. B.,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2844879

Reference20 articles.

1. Mobility enhancement in surface channel SiGe PMOSFETs with HfO2 gate dielectrics

2. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

3. GaAs MIS structures with SiO2 using a thin silicon interlayer

4. Unpinned GaAs MOS capacitors and transistors

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1. Digitally printed stretchable electronics: a review;Journal of Materials Chemistry C;2019

2. Demonstrating 1 nm‐oxide‐equivalent‐thickness La 2 O 3 and HfO 2 multi‐layer composite oxides on In 0.53 Ga 0.47 As MOS capacitor;Electronics Letters;2016-01

3. Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors;Journal of Applied Physics;2011-03

4. Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues;Microelectronic Engineering;2011-03

5. Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor;Applied Physics Letters;2011-01-24

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