Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3549197
Reference19 articles.
1. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
2. Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric
3. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
4. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
5. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
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1. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition;Nanoscale Research Letters;2017-05-08
2. Structural and electrical properties of high-k HfO2 films modified by CHF3 and C4F8/O2 plasmas;Applied Physics A;2014-08-06
3. Electrical properties improvement of high-k HfO2 films by combination of C4F8 dual-frequency capacitively coupled plasmas treatment with thermal annealing;Applied Surface Science;2014-08
4. Role of high-frequency power in C4F8dual-frequency capacitively coupled plasmas treating high-kHfO2films;Journal of Physics D: Applied Physics;2013-10-07
5. Sidewall Crystalline Orientation Effect of Post-treatments for a Replacement Metal Gate Bulk Fin Field Effect Transistor;ACS Applied Materials & Interfaces;2013-09-11
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