Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2943186
Reference18 articles.
1. Proceedings of the IEEE Electron Devices Meeting;OK I.,2006
2. Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
3. Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide
4. IEEE International Symposium on Compound Semiconductors;Hong M.,1998
5. Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
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1. Effect of an inserted Al2O3 passivation layer for atomic layer deposited HfO2 on indium phosphide;Semiconductor Science and Technology;2021-11-10
2. Facile Process for Surface Passivation Using (NH4)2S for the InP MOS Capacitor with ALD Al2O3;Materials;2019-11-27
3. Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation;Superlattices and Microstructures;2014-08
4. MOSFETs on InP Substrate with LaAlO3/HfO2 Bilayer of Different LaAlO3 Thickness and Single LaXAl1-XO Layer with Different La Doping Level;ECS Transactions;2013-03-15
5. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates;Surface Science Reports;2013-03
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