Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS Applications
2. InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric
3. Improved Electrical Properties of HfO2-Based Gate Dielectrics on InP Substrate Using Al2O3/HfO2 and SF6 Plasma Treatment
4. Low Leakage and High-k Liquid Phase Deposited TiO[sub 2] and SiO[sub 2]/TiO[sub 2] Films on (NH[sub 4])[sub 2]S-Treated GaAs
5. AlGaN/GaN MOSHEMT With High-Quality $\hbox{Gate}$–$\hbox{SiO}_{2}$ Achieved by Room-Temperature Radio Frequency Magnetron Sputtering
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1. Influence of the Passivation Layers on the Self-Heating Effect in the Double Channel AlGaN/GaN MOS-HEMT Device;Russian Microelectronics;2023-04
2. Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications;Journal of Computational Electronics;2023-02-28
3. Double Gate Double-Channel AlGaN/GaN MOS HEMT and its Applications to LNA with Sub-1 dB Noise Figure;Silicon;2022-09-05
4. High Electron Mobility Transistor: Physics-Based TCAD Simulation and Performance Analysis;HEMT Technology and Applications;2022-06-24
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