Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density-Reference-Cited by-同舟云学术

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Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

Published:2013-09-30 Issue:14 Volume:103 Page:142903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Trinh Hai-Dang,Lin Yueh-Chin,Nguyen Minh-Thuy,Nguyen Hong-Quan,Duong Quoc-Van,Luc Quang-Ho,Wang Shin-Yuan,Nguyen Manh-Nghia,Yi Chang Edward

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4823584

Reference22 articles.

1. SILICON (Si)

2. Nanometre-scale electronics with III–V compound semiconductors

3. Integrated nanoelectronics for the future

4. 85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

5. High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

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3. Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning;Applied Physics Letters;2019-12-02

4. The photoemission study of InSb/HfO2 stacks upon N2 rapid thermal annealing;Vacuum;2019-10

5. Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition;Applied Physics Letters;2019-09-16

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