Impurity affected transport properties of quantum well heterostructures with electronic and high-κ dielectric quantum screening-Reference-Cited by-同舟云学术

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Impurity affected transport properties of quantum well heterostructures with electronic and high-κ dielectric quantum screening

Published:2024-09 Issue: Volume: Page:416535
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Aharonyan K.H.^ORCID,Kazaryan E.M.^ORCID,Bazzan M.,Kokanyan E.P.^ORCID

Funder

Higher Education Services Corporation

Publisher

Elsevier BV

Reference28 articles.

1. Two-dimensional materials and their prospects in transistor electronics;Schwierz;Nanoscale,2015

2. Nanometre-scale electronics with III-V compound semiconductors;Del Alamo;Nature,2011

3. High-K materials and Metal Gates for CMOS applications;Robertson;Mater. Sci. and Eng.: R: Rep.,2015

4. Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition;Baik;Sci. Rep.,2017

5. Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved in Situ Studies;D’Acunto;Appl. Electron Mater.,2020

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