85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications-Reference-Cited by-同舟云学术

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85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

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Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Author:

Datta S.,Ashley T.,Brask J.,Buckle L.,Doczy M.,Emeny M.,Hayes D.,Hilton K.,Jefferies R.,Martin T.,Phillips T.J.,Wallis D.,Wilding P.,Chau R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10701/33791/01609466.pdf?arnumber=1609466

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