1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density-Reference-Cited by-同舟云学术

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Published:2012-03-26 Issue:13 Volume:100 Page:132906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suzuki R.,Taoka N.,Yokoyama M.,Lee S.,Kim S. H.,Hoshii T.,Yasuda T.,Jevasuwan W.,Maeda T.,Ichikawa O.,Fukuhara N.,Hata M.,Takenaka M.,Takagi S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3698095

Reference16 articles.

1. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

2. Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

3. Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

4. Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

5. Achieving 1nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

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