Electrochemical mechanism and kinetics of electrodissolution-coupled hafnium alkoxide synthesis in tetraethylammonium-chloride-based anhydrous system-Reference-Cited by-同舟云学术

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Electrochemical mechanism and kinetics of electrodissolution-coupled hafnium alkoxide synthesis in tetraethylammonium-chloride-based anhydrous system

Published:2024-05 Issue:5 Volume:34 Page:1681-1693
ISSN:1003-6326
Container-title:Transactions of Nonferrous Metals Society of China
language:en
Short-container-title:Transactions of Nonferrous Metals Society of China

Author:

LI Shuai,YANG Sheng-hai,CHEN Yong-ming,TANG Chao-bo,LAI Yan-qing,DENG Chao-yong,WANG Chang-hong

Funder

Science and Technology Program of Hunan Province

Publisher

Elsevier BV

Reference35 articles.

1. Vapor deposition of metal oxides and silicates: Possible gate insulators for future microelectronics [J];GORDON;Chemistry of Materials,2001

2. Atomic layer deposition of HfO2 using alkoxides as precursors [J];MUI;The Journal of Physical Chemistry B,2004

3. 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density [J];SUZUKI;Applied Physics Letters,2012

4. Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition [J];KANG;Applied Physics Letters,2010

5. Interfacial reactions between HfO2 films prepared by atomic-layer-deposition and an InP substrate using postnitridation with NH3 vapor [J];KANG;Electrochemical and Solid-State Letters,2012

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