Improved Endurance of Ferroelectric Hf x Zr 1–x O 2 Integrated on InAs Using Millisecond Annealing-Reference-Cited by-同舟云学术

Improved Endurance of Ferroelectric Hf _x Zr _1–x O ₂ Integrated on InAs Using Millisecond Annealing

Published:2022-08-23 Issue:27 Volume:9 Page:2201038
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Athle Robin¹²^ORCID,Blom Theodor¹,Irish Austin²³^ORCID,Persson Anton E. O.¹^ORCID,Wernersson Lars‐Erik¹^ORCID,Timm Rainer²³^ORCID,Borg Mattias¹²^ORCID

Affiliation:

1. Electrical and Information Technology Lund University Box 118 Lund 22 100 Sweden

2. NanoLund, Lund University Box 118 Lund 22 100 Sweden

3. Division of Synchrotron Radiation Research Lund University Box 118 Lund 22 100 Sweden

Funder

Crafoordska Stiftelsen

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202201038

Reference47 articles.

1. Review and perspective on ferroelectric HfO2-based thin films for memory applications

2. Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf_1–xZr_xO₂

3. Ferroelectric materials for neuromorphic computing

4. Sub-nanosecond memristor based on ferroelectric tunnel junction

5. Nanometre-scale electronics with III–V compound semiconductors

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