Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1–xZrxO2-Reference-Cited by-同舟云学术

Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf_1–xZr_xO₂

Published:2022-02-21 Issue:3 Volume:4 Page:1002-1009
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Athle Robin¹²^ORCID,Persson Anton E.O¹,Troian Andrea¹,Borg Mattias¹²^ORCID

Affiliation:

1. Electrical and Information Technology, Lund University, Box 118, 22 100 Lund, Sweden

2. NanoLund: Centre for Nanoscience, Lund University, Box 118, 22 100 Lund, Sweden

Funder

Vetenskapsr?det

NanoLund Centre for Nanoscience, Lund University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01181

Reference44 articles.

1. Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing

2. Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions

3. Giant Electroresistance in Ferroelectric Tunnel Junctions

4. Wittig, C. R. Chapter 3. Insulators, Metals, and Semiconductors. Debye–Hückel Model 256 Metals and Doped Semiconductors; https://pdfslide.net/documents/chapter-3-insulators-metals-and-semiconductors-debye-hckel-model-256-metals.html (accessed 2021-11-13).

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. HfAlOx-based ferroelectric memristor for nociceptor and synapse functions;The Journal of Chemical Physics;2024-08-26

2. Ferroelectric tunnel junctions: promise, achievements and challenges;Journal of Physics D: Applied Physics;2024-03-26

3. Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions;Surfaces and Interfaces;2024-03

4. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024

5. Ferroelectric Tunnel Junction Memristors for In‐Memory Computing Accelerators;Advanced Intelligent Systems;2023-12-24