Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions-Reference-Cited by-同舟云学术

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Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions

Published:2024-03 Issue: Volume:46 Page:103977
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Yuan Jin,Dai Jian-Qing^ORCID,Liu Yu-Zhu,Zhao Miao-Wei

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference53 articles.

1. Ferroelectric tunnel junctions: Modulations on the potential barrier;Wen;Adv. Mater.,2020

2. CMOS compatible integrated ferroelectric tunnel junctions (FTJ);Abuwasib,2015

3. Scalability study on ferroelectric-HfO2 tunnel junction memory based on non-equilibrium Green function method;Mo,2019

4. High-speed switching and giant electroresistance in an epitaxial Hf0.5Zr0.5O2-based ferroelectric tunnel junction memristor;Du;ACS Appl. Mater. Interf.,2022

5. In-memory computing with ferroelectrics;Yang;Nat. Electron.,2020

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