Ferroelectric materials for neuromorphic computing
Author:
Affiliation:
1. Center for Single Atom-based Semiconductor Device and Department of Material Science and Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea
Funder
National Research Foundation of Korea
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5108562
Reference73 articles.
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2. Proposal of Adaptive-Learning Neuron Circuits with Ferroelectric Analog-Memory Weights
3. Partial Switching Kinetics of FerroelectricPbZrxTi1-xO3Thin Films Prepared by Sol-Gel Technique
4. Y. Kaneko, Y. Nishitani, M. Ueda, and A. Tsujimura, in Symposium on VLSI Technology (IEEE, 2013), pp. T238–T239.
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