Field-Effect Mobility of InAs Surface Channel nMOSFET With Low <inline-formula> <tex-math notation="LaTeX">$D_{\rm it}$ </tex-math></inline-formula> Scaled Gate-Stack-Reference-Cited by-同舟云学术

Field-Effect Mobility of InAs Surface Channel nMOSFET With Low $D_{\rm it}$ Scaled Gate-Stack

Published:2015-08 Issue:8 Volume:62 Page:2429-2436
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shih-Wei Wang ,Vasen Timothy,Doornbos Gerben,Oxland Richard,Shang-Wen Chang ,Xu Li ,Contreras-Guerrero Rocio,Holland Martin,Chien-Hsun Wang ,Edirisooriya Madhavie,Rojas-Ramirez Juan Salvador,Ramvall Peter,Thoms Stephen,Macintyre Douglas S.,Vellianitis Georgios,Hsieh Gordon C. H.,Yang-Sih Chang ,Yin Kaimin M.,Yee-Chia Yeo ,Diaz Carlos H.,Droopad Ravi,Thayne Iain G.,Passlack Matthias

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7163647/07163691.pdf?arnumber=7163691

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