Role of grooving angle of 14‐nm‐InAs channel quantum well MOSFETs in improving analogue/RF and linearity performance
Author:
Affiliation:
1. Future Institute of TechnologyKolkata700154India
2. Department of Electronics and Telecommunication EngineeringJadavpur UniversityKolkata700032India
3. Institute of Radio Physics and ElectronicsUniversity of CalcuttaKolkata700009India
Funder
Department of Electronics and Information Technology, Ministry of Communications and Information Technology
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2019.0064
Reference40 articles.
1. Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness
2. Impact of a Spacer Layer on the Analog Performance of Asymmetric InP/InGaAs nMOSFETs
3. Nanometre-scale electronics with III–V compound semiconductors
4. High‐frequency InGaAs tri‐gate MOSFETs with f max of 400 GHz
5. Long‐channel In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum‐well MOSFETs on InP substrate with record μ n_eff = 6960 cm 2 /V‐s
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1. Effect of Grooving Angle on Analog Performance of InGaSb Quantum Well p-MOSFET;2023 8th International Conference on Computers and Devices for Communication (CODEC);2023-12-14
2. Super Junction GaN HEMT: Achieving High Breakdown Voltage and Low Harmonic Distortion;2023 8th International Conference on Computers and Devices for Communication (CODEC);2023-12-14
3. Impact of channel thickness on Single-Event Transient in InAs Quantum Well n-MOSFETs;2022 IEEE Calcutta Conference (CALCON);2022-12-10
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