Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness-Reference-Cited by-同舟云学术

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Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

Published:2011-09-05 Issue:10 Volume:99 Page:103507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Takei Kuniharu,Chuang Steven,Fang Hui,Kapadia Rehan,Liu Chin-Hung,Nah Junghyo,Sul Kim Ha,Plis E.,Krishna Sanjay,Chueh Yu-Lun,Javey Ali

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3636110

Reference18 articles.

1. Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

2. Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

3. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

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1. Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si;ACS Applied Electronic Materials;2022-01-10

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3. RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon;Solid-State Electronics;2020-10

4. Electron-hole bilayer light-emitting device: Concept and operation;Solid-State Electronics;2020-06

5. Reduction of Harmonic Distortion of 14-nm InAs Quantum Well n-MOSFET for High DC to AC Conversion Efficiency and High Voltage Gain;2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2020-04

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