Electron mobility anisotropy in InAs/GaAs(001) heterostructures
Author:
Affiliation:
1. Department of Physics, Chemistry and Biology, Linköping University, SE 581-83, Linköping, Sweden
2. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
Funder
Energimyndigheten
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0039748
Reference46 articles.
1. Indium arsenide: a semiconductor for high speed and electro-optical devices
2. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
3. A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications
4. Antimonide-based compound semiconductors for electronic devices: A review
5. 30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Scattering anisotropy in HgTe (013) quantum well;Applied Physics Letters;2022-08-22
2. Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates;Journal of Semiconductors;2022-07-01
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