A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference94 articles.
1. Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μm
2. The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers
3. Midwave infrared stimulated emission from a GaInSb/InAs superlattice
4. Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures
5. Quantum Cascade Laser
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