A 2 µm Gallium Antimonide Semiconductor Laser Based on Slanted, Wedge-Shaped Microlens Fiber Coupling
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Published:2024-01-25
Issue:2
Volume:11
Page:108
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ISSN:2304-6732
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Container-title:Photonics
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language:en
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Short-container-title:Photonics
Author:
Liu Zhaohong12ORCID, Wang Jiayue1, Li Ning13, Yang Zhongwei1, Li Shaowen1, Li Sensen123, Wang Wei4, Bayan Heshig4, Cheng Weining3, Zhang Yu2, Wu Zhuokun3, Sun Hongyu3, Xia Yuanqing1, Wang Yulei1, Lu Zhiwei1
Affiliation:
1. Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China 2. Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated System, Jincheng 048000, China 3. China Electronics Technology Optoelectronic Research Institute, Tianjin 300308, China 4. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Abstract
Semiconductor lasers with a wavelength of 2 µm, composed of antimonide materials, find important applications in trace gas detection, laser medicine, and free-space optical communication, among others. In this paper, a more suitable microlens shape for 2 µm gallium antimonide semiconductor lasers is designed. Based on the fiber coupling efficiency model, the parameters of the designed slanting wedge-shaped microlens fiber are optimized to improve laser beam quality. The large tangent angle on both sides of the slanted, wedge-shaped microlens fiber is calculated using Snell’s law, and the fiber core diameter and small wedge angle are determined through space fiber coupling experiments. After packaging the fiber coupling module with the chip, the laser output beam exhibits good overall symmetry in the spot with a uniform intensity distribution. The maximum output power is approximately 210 mW, demonstrating good power stability.
Funder
National Natural Science Foundation of China China Postdoctoral Science Foundation Hebei Province Postdoctoral special grant Research Projects of High Education Institutions of Hebei Province Natural science research Foundation of Hebei University of Technology Open Project Program of Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated National Key R&D Program of China
Subject
Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics
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