RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon-Reference-Cited by-同舟云学术

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RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon

Published:2020-10 Issue: Volume:172 Page:107885
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cheng Qi,Cui Peng,Khandelwal Sourabh,Zeng Yuping

Funder

Air Force Office of Scientific Research

National Aeronautics and Space Administration

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Moore's law forever?;Lundstrom;Science,2003

2. International Technology Roadmap for Semiconductors (ITRS), 2013. [Online]. Available: http://public.itrs.net.

3. Nanometer-scale electronics with III–V compound semiconductors;del Alamo;Nature,2011

4. Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness;Takei;Appl Phys Lett,2011

5. InAs FinFETs performance enhancement by superacid surface treatment;Zeng;IEEE Trans Electron Dev,2019

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