Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin-Film Transistor Using Ion-Conducting Gate Dielectric-Reference-Cited by-同舟云学术

Role of Electron Donation of TiO2 Gate Interface for Developing Solution-Processed High-Performance One-Volt Metal-Oxide Thin-Film Transistor Using Ion-Conducting Gate Dielectric

Published:2019-07-29 Issue:33 Volume:123 Page:20278-20286
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Sharma Anand¹,Chourasia Nitesh K.¹,Pal Nila¹,Biring Sajal²,Pal Bhola N.¹²^ORCID

Affiliation:

1. School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India

2. Organic Electronics Research Center and Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243, Taiwan

Funder

Science and Engineering Research Board

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b04045

Reference30 articles.

1. Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors

4. Present status of amorphous In–Ga–Zn–O thin-film transistors

5. High-K dielectrics for the gate stack

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