Fabrication of non-volatile memory transistor by charge compensation of interfacial ionic polarization of a ferroelectric gate dielectric-Reference-Cited by-同舟云学术

Fabrication of non-volatile memory transistor by charge compensation of interfacial ionic polarization of a ferroelectric gate dielectric

Published:2023-08 Issue: Volume:33 Page:101862
ISSN:2352-9407
Container-title:Applied Materials Today
language:en
Short-container-title:Applied Materials Today

Author:

Chakraborty Rajarshi,Pal Nila,Pandey Utkarsh,Pramanik Subarna,Paliwal Srishti,Suman Swati,Gupta Akanksha,Singh Akhilesh Kumar,Swaminathan Parasuraman,Roy Pradip Kumar,Pal Bhola Nath

Publisher

Elsevier BV

Subject

General Materials Science

Reference48 articles.

1. The future of ferroelectric field-effect transistor technology

2. A ferroelectric semiconductor field-effect transistor

3. Thin-film ferroelectric materials and their applications

4. Enhanced memory characteristics by interface modification of ferroelectric LiNbO3 films on Si using ZnO buffers

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