Affiliation:
1. School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
Abstract
A solution processed Ag-ion-exchanged Li5AlO4 thin film has been used to fabricate a high performance oxide memristor device with enhanced bistable switching and memory retention.
Funder
Science and Engineering Research Board
Department of Science and Technology, Ministry of Science and Technology, India
Publisher
Royal Society of Chemistry (RSC)