Molecular Mechanism of Thermal Dry Etching of Iron in a Two-Step Atomic Layer Etching Process: Chlorination Followed by Exposure to Acetylacetone
Author:
Affiliation:
1. Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States
2. Department of Material Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
Funder
Division of Chemistry
University of Delaware
Division of Civil, Mechanical and Manufacturing Innovation
National Institute of General Medical Sciences
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c10556
Reference49 articles.
1. Overview of atomic layer etching in the semiconductor industry
2. Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions
3. Directional etch of magnetic and noble metals. I. Role of surface oxidation states
4. Directional etch of magnetic and noble metals. II. Organic chemical vapor etch
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