Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions-Reference-Cited by-同舟云学术

Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions

Published:2016-05-24 Issue:5 Volume:10 Page:4889-4894
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

George Steven M.¹,Lee Younghee¹

Affiliation:

1. Department of Chemistry and Biochemistry and ‡Department of Mechanical Engineering, University of Colorado at Boulder, Boulder, Colorado 80309, United States

Funder

Division of Chemistry

Defense Advanced Research Projects Agency

Intel Corporation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b02991

Reference22 articles.

1. Overview of atomic layer etching in the semiconductor industry

2. Atomic Layer Etching: An Industry Perspective

3. Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

4. Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride

5. Mechanism of Thermal Al2O3 Atomic Layer Etching Using Sequential Reactions with Sn(acac)2 and HF

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