Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions
Author:
Affiliation:
1. Department of Chemistry and Biochemistry and ‡Department of Mechanical Engineering, University of Colorado at Boulder, Boulder, Colorado 80309, United States
Funder
Division of Chemistry
Defense Advanced Research Projects Agency
Intel Corporation
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.6b02991
Reference22 articles.
1. Overview of atomic layer etching in the semiconductor industry
2. Atomic Layer Etching: An Industry Perspective
3. Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?
4. Atomic Layer Etching of Al2O3 Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)2 and Hydrogen Fluoride
5. Mechanism of Thermal Al2O3 Atomic Layer Etching Using Sequential Reactions with Sn(acac)2 and HF
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