Author:
Wong S. Simon,Ryu Changsup,Lee Haebum,Kwon Kee-Won
Abstract
ABSTRACTThe integration of Cu interconnections will require sophisticated structures to prevent Cu from coming into contact with devices. The barriers for Cu also must have good adhesion with dielectric and Cu, and yield desirable microstructure of Cu. This paper discusses several critical barrier requirements and compares the properties of Ta and Ti/TiN barrier systems.
Publisher
Springer Science and Business Media LLC
Cited by
26 articles.
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