Evidence of heteroepitaxial growth of copper on beta-tantalum
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119439
Reference11 articles.
1. Copper metallization for ULSL and beyond
2. Comparison of the diffusion barrier properties of chemical‐vapor‐deposited TaN and sputtered TaN between Cu and Si
3. Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W)
4. Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations
5. Effects of barrier layer and processing conditions on thin film Cu microstructure
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