Growth of Crystalline Silicon, Microcrystalline and Epitaxial at Low Substrate Temperature-Reference-Cited by-同舟云学术

Growth of Crystalline Silicon, Microcrystalline and Epitaxial at Low Substrate Temperature

Published:1989 Issue: Volume:149 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Tanabe H.,Azuma M.,Uematsu T.,Shirai H.,Hanna J.,Shimizu I

Abstract

ABSTRACTBoth microcrystalline and epitaxially grown Si thin films were prepared at low substrate temperature from different precursors under control of atomic hydrogen. With the precursors, SiHn (n≤3), generated by plasma-induced decomposition of Sil4, microcrystalline Si was formed through the island-like clusters with the aid of atomic hydrogen, while two-dimensional growth was caused with the precursors, SiHnFm (n+m≤3) generated from SiF4.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

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