Growth‐induced surface state in hydrogenated and fluorinated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348717
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Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transient photocurrent in hydrogenated amorphous silicon and implications for photodetector devices;Journal of Applied Physics;1996
2. Carrier lifetime in amorphous semiconductors;Journal of Applied Physics;1994-06
3. Experimental evidence for the annealing of surface defects ina‐Si:H during deposition;Journal of Applied Physics;1992-11-15
4. a‐Si:F anda‐Si:F:H prepared by ion‐beam‐assisted reactive deposition;Journal of Applied Physics;1992-08-15
5. Near-Surface Density of States in a-Si:H By Photoelectron Yield Spectroscopies.;MRS Proceedings;1992
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