Experimental evidence for the annealing of surface defects ina‐Si:H during deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352079
Reference20 articles.
1. Density of the gap states in undoped and doped glow discharge a-Si:H
2. Surface states and the exponential valence-band tail ina-Si:H
3. High resolution transmission electron microscopy of silicon‐on‐insulator formed by high dose oxygen implantation
4. Surface effects in hydrogenated amorphous silicon studied by photothermal-deflection experiments
5. Growth‐induced surface state in hydrogenated and fluorinated amorphous silicon
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4. Transient photocurrents as a spatially resolved probe of carrier transport and defect distributions in silicon thin films;Materials Science and Engineering: B;2013-05
5. Electronic Properties of Ultrathin a-Si:H Layers and the a-Si:H/c-Si Interface;Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells;2012
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