Author:
Amano H.,Iwaya M.,Hayashi N.,Kashima T.,Katsuragawa M.,Takeuchi T.,Wetzel C.,Akasaki I.
Abstract
In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1−xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed.
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Reference19 articles.
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