In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350529
Reference12 articles.
1. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
4. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
5. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
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