Growth of Single Crystal AlxGa1-xN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Growth of Single Crystal AlxGa1-xN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy

Published:1993-08-01 Issue:Part 2, No. 8A Volume:32 Page:L1039-L1042
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hirosawa Koji,Hiramatsu Kazumasa,Sawaki Nobuhiko,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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