Crack formation and development in AlGaN/GaN structures-Reference-Cited by-同舟云学术

Crack formation and development in AlGaN/GaN structures

Published:2003-11-24 Issue:7 Volume: Page:2055-2058
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Parbrook P. J.¹,Wang T.¹,Whitehead M. A.¹,Harrison C. N.¹,Lynch R. J.¹,Murray R. T.²

Affiliation:

1. EPSRC National Centre for III–V Technologies, Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, United Kingdom

2. Materials Science and Engineering, Department of Engineering, University of Liverpool, Liverpool, L69 3GH, United Kingdom

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303546

Reference9 articles.

1. Preparation of AlxGa1-xN/GaN heterostructure by MOVPE

2. Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures

3. Strain relaxation in AlGaN under tensile plane stress

4. Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

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1. Effect of substrate and growth parameters on the InAlN barrier layer in InAlN/AlN/GaN HEMT structure grown by MOVPE;INTELLIGENT BIOTECHNOLOGIES OF NATURAL AND SYNTHETIC BIOLOGICALLY ACTIVE SUBSTANCES: XIV Narochanskie Readings;2023

2. Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts;Microelectronics Reliability;2017-03

3. Nanoscale fissure formation in Al x Ga1-x N/GaN heterostructures and their influence on Ohmic contact formation;physica status solidi (a);2016-10-25

4. Brittle fracture toughnesses of GaN and AlN from first-principles surface-energy calculations;Applied Physics Letters;2015-05-25

5. Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers;Japanese Journal of Applied Physics;2014-08-29