Brittle fracture toughnesses of GaN and AlN from first-principles surface-energy calculations
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106-5050, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4921855
Reference33 articles.
1. Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1−xN/GaN heterostructures
2. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
3. Cracking of GaN films
4. J. W. Hutchinson and Z. Suo ,Advances in Applied Mechanics( Academic, San Diego, 1992), Vol. 29, pp. 63–191.
5. Defects in epitaxial multilayers
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