Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1−xN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3276561
Reference15 articles.
1. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes
2. Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes
3. Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates
4. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
5. Preparation of AlxGa1-xN/GaN heterostructure by MOVPE
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