Preparation of AlxGa1-xN/GaN heterostructure by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxy
2. Energy band‐gap bowing parameter in an AlxGa1−xN alloy
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
5. Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE
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2. Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness;Journal of Crystal Growth;2023-04
3. Impact of interfacial compositional diffusion on interfacial phonon scattering and transmission in GaN/AlN heterostructure;Journal of Applied Physics;2023-03-01
4. Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate;Crystals;2022-07-16
5. Influence of lattice misfit on crack formation during the epitaxy of In Al1-N on GaN;Journal of Alloys and Compounds;2022-01
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