Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy
Author:
Affiliation:
1. Materials Department, University of California, Santa Barbara, California 93106, USA
2. Electrical and Computer Engineering Department, University of Texas, Austin, Texas 78758, USA
Funder
King Abdulaziz City for Science and Technology (KACST)
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara (SSLEEC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4991417
Reference32 articles.
1. Nonpolar and Semipolar Group III Nitride-Based Materials
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4. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
5. Gallium-nitride-based materials for blue to ultraviolet optoelectronics devices
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